Silicon light emitting diodes emitting over the 1.2–1.4μm wavelength region in the extended optical communication band

Abstract

Here, we demonstrate bulk silicon light emitting diodes operating over the 1.2–1.35μm range. This is achieved by the implantation of the rare earth thulium, incorporated in the trivalent Tm3+ state, into silicon p-n junctions. Light emitting diodes operating under forward bias have been obtained by codoping of boron to reduce the thermal quenching. Seven sharp lines are observed, corresponding to known internal Tm3+ transitions in the manifold from the H53 to the H63 ground states. This center, together with the basic 1.15μm silicon emitters and Si:Er devices operating at 1.54μm, now enables significant coverage of the extended (1.1–1.8μm) optical communications band in silicon.