Silicon-integrated short-wavelength hybrid-cavity VCSEL.

Emanuel P Haglund,Johan S Gustavsson,Anders Larsson,Petter Westbergh,Gunther Roelkens,Sulakshna Kumari,Roel Baets

doi:10.1364/oe.23.033634

Abstract

We demonstrate a short-wavelength hybrid-cavity vertical-cavity surface-emitting laser (VCSEL) heterogeneously integrated on silicon. A GaAs-based "half-VCSEL" has been attached to a dielectric distributed Bragg reflector (DBR) on a silicon wafer using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, thereby creating a cavity with the standing-wave optical field extending over the silicon- and GaAs-based parts of the cavity. A 9 µm oxide aperture diameter VCSEL with a threshold current of 1.2 mA produces 1.6 mW optical output power at 6.0 mA bias current with a wavelength of ~845 nm.

Highlights

The development of photonic integrated circuits (PICs) on a silicon nitride waveguide platform [1] would benefit applications using light in the visible and near infrared, such as life sciences and short wavelength optical interconnects
We demonstrate a short-wavelength hybrid-cavity vertical-cavity surface-emitting laser (VCSEL) heterogeneously integrated on silicon
A GaAs-based “half-VCSEL” has been attached to a dielectric distributed Bragg reflector (DBR) on a silicon wafer using ultra-thin divinylsiloxanebis-benzocyclobutene (DVS-BCB) adhesive bonding, thereby creating a cavity with the standing-wave optical field extending over the silicon- and GaAs-based parts of the cavity

Summary

Introduction

The development of photonic integrated circuits (PICs) on a silicon nitride waveguide platform [1] would benefit applications using light in the visible and near infrared (where silicon nitride is transparent, in contrast to Si), such as life sciences and short wavelength optical interconnects. Such PICs need an integrated, low current and high efficiency light source. An approach for VCSEL integration that lends itself to wafer-level processing is heterogeneous integration, where a III-V semiconductor epitaxial structure containing a distributed Bragg reflector (DBR) and an active region (“half-VCSEL”) is attached to an optical reflector on the Si wafer.

Concept and design

Fabrication

Measurements

Conclusion