Silicon inhomogeneities in Fe‐3 wt% Si single crystals grown by floating zone melting

Abstract

AbstractThe development of radial Si inhomogeneities and striations with the growth rate increasing from 20 to 65 mm/h has been observed in Fe‐3 wt% Si single crystals grown by floating zone melting. Within a relatively small interval of growth rates (49–54 mm/h) the distinct striations extend from the periphery with enhanced Si concentration to the whole crystal volume. The solid state diffusion cannot be responsible for this phenomenon although it modifies the striation structure, especially at lower growth rates.