Silicon IGBT (Insulated Gate Bipolar Transistor)

Abstract

The silicon IGBT is arguably the most successful innovation in power semiconductor devices during the past three-decades. By using a combination of bipolar current flow controlled using an MOS-gate structure, the power gain was increased a million fold when compared with existing power bipolar junction transistors and power MOSFET structures with high blocking voltages [1]. The widespread applications for the device in consumer, industrial, transportation, lighting, and even medical applications is a testimonial to its highly desirable characteristics. The IGBT offers a unique combination of ease of control due to its MOS-gate structure, low chip cost due to its relatively high on-state current density, and exception ruggedness. Silicon IGBT modules are now available with blocking voltage capability up to 6.5 kV and current handling capability of 1,000 A. Any new high voltage power device technology must offer significant improvements in performance relative to the silicon IGBT to be considered attractive for applications.