Abstract
This paper describes a technique for fabricating a LIGA mask that offers good compatibility with the silicon IC process. X-ray exposure can be eliminated from the LIGA mask-fabrication process, so that LIGA masks can be fabricated with existing silicon IC process equipment. A gold absorber pattern, 2 μm wide and 10 μm thick, has been successfully fabricated by combining a three-layer resist-patterning process with the electroplating process. Improvements in both the mask structure and fabrication process alleviate the problems of dust in a cleanroom and contamination in the etching chamber.
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