Silicon Heterojunction Solar Cells with MoOx Hole‐Selective Layer by Hot Wire Oxidation–Sublimation Deposition

Abstract

In this article, a novel hot wire oxidation–sublimation deposition (HWOSD) technique, as an optional technology, is developed to prepare molybdenum oxide (MoOx) thin films. Silicon heterojunction (SHJ) solar cells with the HWOSD MoOx as a hole‐selective transport layer (HSL) are fabricated. A power conversion efficiency up to 21.10% is achieved on a champion SHJ solar cell using a 14 nm MoOx layer as the HSL. Dark current density–voltage–temperature (J–V–T) characteristics of the SHJ solar cell are measured at temperatures ranging from 200 to 380 K. Transport processes including thermionic emission of electrons over the potential barrier and quantum‐assisted tunneling of holes through the gap states in the MoOx layer are used to fit the J–V curves of the MoOx/n‐c‐Si heterojunction. The investigation of the transport mechanisms provides a better understanding of the characteristics of the novel SHJ solar cells and it is helpful to fully demonstrate the potential of such kinds of solar cells in the future.