Silicon Heterojunction Solar Cell with Intrinsic Hydrogenated Amorphous Silicon Layer Deposited by Facing Target Sputtering

Abstract

We demonstrated the fabrication of silicon heterojunction (SHJ) solar cells using intrinsic hydrogenated amorphous silicon (i-a-Si:H) deposited by facing target sputtering (FTS), which does not require explosive gases such as SiH 4 . The fabricated solar cell showed a conversion efficiency of 13.1%, an open-circuit voltage of 680 mV, a short-circuit current density of 34.4 mA/cm2, and a fill factor of 0.56. The low fill factor is the main limiting factor of the solar cell performance. We conclude that the cause of the low fill factor is the slightly thick i-a-Si:H layer. A higher efficiency can be achieved by optimizing the properties of the i-a-Si:H deposited by FTS.