Silicon-germanium nanostructures with high germanium concentration

Abstract

The impact of nucleation conditions on the quality of epitaxial layers of germanium and GeSi alloys containing a high Ge mole fraction grown on (100) silicon substrates using electron-beam epitaxy is considered. The GexS1 -x/Ge superlattices are grown on a GeySi1 -y (x > y) relaxed buffer layer. X-ray diffractometry, atomic force microscopy and Auger spectroscopy are the main techniques used to study the properties of the grown structures.