Abstract
Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of ~10 mA/cm² and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage.
Highlights
The established silicon (Si) complementary metal-oxide semiconductor (CMOS) technology provides a low-cost platform and reproducible fabrication capabilities for on-chip optical and electronic signal processing
While compound semiconductor optoelectronic devices operate with relatively high performance, SiGe-based optoelectronic devices offer ease of processing and integration with electronics, low cost and strain tunability
Germanium is a promising semiconductor compatible with both CMOS and Group III-V technologies and it is sensitive at standard telecommunication bands (C-band, L-band) where Si is transparent [1]
Summary
The established silicon (Si) complementary metal-oxide semiconductor (CMOS) technology provides a low-cost platform and reproducible fabrication capabilities for on-chip optical and electronic signal processing. While compound semiconductor optoelectronic devices operate with relatively high performance, SiGe-based optoelectronic devices offer ease of processing and integration with electronics, low cost and strain tunability. Monolithic integration of modulators and optical detectors with silicon readout integrated circuits (ROIC) paves the way for optical functionality on silicon ICs for near infrared imaging and communications, low cost spectroscopy applications, and hyperspectral imaging applications. For such applications, Si compatible optical detectors with tunable spectral responses could provide significant performance and cost advantage. We report the growth of very thin Ge-SiGe MQWs as well as fabrication and optoelectronic characterization of high performance p-i-n optical detectors on such layers
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