Abstract
Silicon on insulator (SOI) structures were produced by recrystallization of polycrystalline silicon deposited on thermally grown SiO2 using either a single‐flash lamp pulse or light strip scanning. In the latter case of lateral zone melting, encapsulating coatings of Si3N4/SiO2 were found to be necessary to obtain closed films. Examinations by electron microscopy revealed the formation of subgrain boundaries that can be entrained under light‐absorbing strips of Si or MoSi2. In conclusion of basic considerations concerning the stability of the system during recrystallization, a major influence of the wetting behavior at the interface between the encapsulating layer and the molten silicon was deduced, and a rough interface and/or the addition of some monolayers of carbon was found to be favorable. Measurements performed with SOI test circuits confirmed the device‐worthy quality of the films, for which first applications in optoelectronic memories have been realized.
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