Abstract
AbstractP type silicon layers for photovoltaic applications have been deposited on low cost multicrystalline silicon substrates prepared by directional solidification or by electromagnetic casting with solar grade charges. The thickness is between 4 to 20 μm. The layers were characterized by Light Beam Induced Current (LBIC) mappings at different wavelengthes. Collecting structures are p-n junctions or Al-Si semitransparent diodes. The layer and the substrate can be investigated separately by changing the wavelength of the LBIC maps, or/and by realizing a collecting structure on the free surface of the substrate.It is found that the same extended crystallographic defects are detected by LBIC in the layer and in the substrate. However their recombination strength in the layer is less marked probably due to a higher purity of the layer. The computed values of minority carrier diffusion length are close or larger than the film thickness and the investigated layers could be used to make solar cells.
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