Abstract
AbstractAn inline optical CVD process operating at low temperature (<873 K) and at atmospheric pressure is presented here to grow silicon films on top of crystalline, sintered silicon and pressed silicon powder substrates moving at constant speed (>10 mm/min) inside the furnace. Solid silicon substrates were laser textured to reduce the reflectivity, leveraging the growth rates. Laser patterning has a strong influence in the growth rate, reaching values up to 9 µm/min. Using pressed silicon powder substrates, growth rates increase dramatically to 40‐90 µm/min. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Published Version
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