Abstract
Disilane was studied as a doping gas in low-pressure OMVPE of GaAs. The dependence of Si incorporation on growth temperature was investigated over a wide range of growth pressure from 1 to 100 Torr. At low growth pressures ( <100 Torr), Si incorporation exhibits a marked temperature dependence; Si concentration initially increases with growth temperature, but is independent of growth temperature above a transition temperature, which varies with pressure. The doping efficiency of Si using disilane increases with growth pressure. The pressure dependence of Si incorporation is caused mainly by the change in gas velocity.
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