Abstract
We study the doping in GaP layers grown on n-type silicon wafer by time-modulated plasma-enhanced chemical vapour deposition with additional flow of silane. Classical and electrochemical (ECV) capacitance-voltage methods were performed on GaP/Si heterostructures and they demonstrate high electron concentration in the GaP layer and similar profiles. In addition, glow-discharge optical emission spectroscopy revealed high silicon content in GaP, which should be responsible for the detected high n-type doping.
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