Abstract
We have studied the effects of Si doping on the optical properties of In 0.15Ga 0.85N/In 0.015Ga 0.985N multiple quantum wells (MQWs) by photoluminescence (PL) and time-resolved PL measurements. As increasing Si doping in the barriers, the PL shows an increase of emission intensity and a blueshift of peak energy. The 10 K recombination lifetime depends strongly on the Si doping level in the InGaN barriers, decreasing from ∼80 to ∼20 ns as the doping level is increased from 2×10 18 to 1×10 19 cm −3. The results of Si doping such as the increase of PL intensity, the blueshift of the emission peak, and the increase of recombination rate are discussed.
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