Abstract
The electrical, structure and optical properties of Si-doped Al 0.5Ga 0.5N epilayers with a thickness of about 0.5 μ grown on sapphire substrates using an AIN buffer by metalorganic chemical vapor deposition were reported. Hall-effect measurements showed that n-type Al 0.5Ga 0.5N was achieved achieved with an electron concentration of 1.2 × 10 19 cm −3 and mobility of 12 cm 2·Vs −1 at room temperature. The electron concentration increases with an increase of Si doping level. Lattice constant of c and Raman shift of Si-doped Al 0.5Ga 0.5N epilayers with various SiH 4 flow rates was studied by X-ray diffraction (XRD) and Raman scattering spectrum. With increasing SiH 4 flow rate, the decrease of the lattice constant of c and the frequency of E 2 phonon implies gradual relaxation of the stress in the epilayers.
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