Abstract
We have studied the Si doping efficiency in dilute nitride GaNAs by gas-source molecular beam epitaxy across a substrate temperature range from 460 to 570 °C. Particularly, for samples grown at ~480 °C, the doping efficiency changes drastically from 100 to almost 0 % as the N compositions varies from 0 to 3.1 %. By comparing experimental data to Monte Carlo simulation of N adatom surface diffusion during growth, the change in doping efficiency is believed to be due to passivation of Si dopants by N during epitaxy.
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