Silicon dioxide passivation of gallium arsenide by liquid phase deposition

Abstract

Abstract High quality and stable silicon dioxide (SiO 2 ) films are grown on gallium arsenide (GaAs) substrate by liquid phase deposition (LPD) method at room temperature, with specific emphasis on passivation layer application. The LPD SiO 2 film is of uniformity less than the ∼1.2%. A maximum growth rate and refractive index of silicon dioxide of 1300 A/h and 1.423 are obtained, respectively. The leakage current of as-deposited SiO 2 is 42 pA and the dielectric breakdown field is 11 MV/cm. The film quality demonstrates its potential in fabricating high-speed devices.