Silicon dioxide film with lower deposition temperature in hot-wall, single-type chamber

Abstract

A lower-temperature process for the deposition of silicon dioxide was developed in a hot-wall, single-type chamber, using a gaseous mixture of SiH4 and N2O. The deposition rate was measured as a function of deposition temperature, pressure, and SiH4/N2O flow-rate ratio. At fixed SiH4/N2O, two types of silicon dioxide, which had the same deposition rate, were deposited. One was deposited at low temperature (700 °C) and high pressure (20 Torr), and the other was deposited at high temperature (850 °C) and low pressure (2.5 Torr). The film characteristics of the two types of silicon dioxide were compared. The results revealed that the low-temperature film exhibited similar characteristics to those of the high-temperature film. Therefore, the current high-temperature process can be replaced by a low-temperature process to achieve low thermal budget in semiconductor device processing.