Abstract
Silicon diode detectors have the advantages of high resolution, large signal, and fast response, but lack the flat energy response of the Farmer ion chamber. A study was undertaken to develop a compensating shield for a diode which would make it suitable for use in the spectrum of energies produced by a high-energy radiation beam at depth in a phantom. The energy response of the unshielded diode was quantitated over a range of energies from 18.5 keV to 8 MeV. Shields of different thickness, density, and design were tested experimentally. A partial shield of high-Z material over a diode with miniaturized contacts produced a probe which duplicated the relative dose measurements of the Farmer chamber with less than 1% variation. Typical central axis depth-dose curves and a beam profile, measured with the chamber and the shielded and unshielded probe, are illustrated.
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