Silicon diffusion in germanium described by connecting point defect parameters with bulk properties

Abstract

Silicon diffusion properties in germanium over a range of temperatures and pressures are technologically important for the formation of efficient nanoelectronic devices. Using experimental diffusivity data it is shown that elastic and expansivity data can describe the silicon diffusion coefficients in germanium in the temperature range of 827 K to 1176 K. In that respect, the applicability of the cBΩ model, which assumes that the defect Gibbs energy is proportional to the isothermal bulk modulus and the mean volume per atom, is discussed.