Abstract
A large R&D program has been underway to develop silicon sensors with sufficient radiation tolerance for LHC-Phase-II trackers and the next generation of collision experiments. Key areas of recent RD50 research include new technologies such as CMOS and Low Gain Avalanche Detectors (LGADs), where a dedicated multiplication layer to create a high field region is built into the sensor. We also seek for a deeper understanding of the connection between macroscopic sensor properties such as radiation-induced increase of leakage current, effective doping concentration and trapping, and the microscopic properties at the defect level. Another strong activity is the development of advanced sensor types, like 3D silicon detectors. We will present the state of the art in silicon detectors at radiation levels corresponding to LHC-Phase-II fluences and beyond. Based on our results, we will give an outlook towards the silicon detectors to be used for particle detectors at future colliders like the FCC.
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