Abstract
Silicon-crystal rocking curves are measured with a high angular resolution (~0.1′′) under conditions of the Borrmann effect resonant suppression by transverse ultrasonic vibrations. It is shown that on the curves deep minima appear whose positions depend on the vibrational frequency, in agreement with the theory.
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Schedule a callMore From: Acta crystallographica. Section A, Crystal physics, diffraction, theoretical and general crystallography
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