Abstract
An electrostatic discharge (ESD) protection structure constructed by the stacking of multiple anode gate–cathode gate directly connected silicon-controlled rectifiers (DCSCRs), fabricated in a 0.18- $\mu \text{m}$ CMOS technology is reported in this letter. Two embedded diodes in the DCSCR dictate the turn-ON mechanism and hence give rise to a trigger voltage equal to twice the diode’s turn-ON voltage. This approach enables the DCSCR to offer a diode-like transmission line pulsing IV characteristic with a minimal snapback and a SCR-like high-ESD robustness. At 25 °C, DCSCR has an acceptable nanoampere-level leakage current. Besides, it is verified that the DCSCR can significantly reduce overshoot voltage when stressed by very-fast-rising pulses. As such, an ESD clamp constructed by stacking a selected number of DCSCRs can offer a flexible trigger/holding voltage and is suitable for low and medium voltage ESD protection applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
