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Abstract
Silicon carbon nitride (SiCN) cones were synthesized on Si wafers using an ellipsoid microwave plasma chemical vapor deposition (MPCVD) reactor with gas mixtures of CH 4, SiH 4, Ar, H 2 and N 2 as precursors. It was shown that the cones have nanometer-sized tips and their roots vary from nanometers to micrometers in sizes. The films are atomic-level hybrids composed of Si, C and N atoms. A lowest turn-on field of 0.6 V/μm as well as field emission current densities of 4.7 mA/cm 2 at an applied field of 2.8 V/μm was obtained from these SiCN cones.
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