Abstract

Silicon carbide nanowires (SiC NWs) covered by vertically oriented graphene (SiC@graphene) is prepared by a chemical vapor deposition method. As a microwave absorber, SiC@graphene exhibits a minimum reflection loss (RL) of −16.2 dB at the thickness of 2.5 mm with an absorption bandwidth of 2.64 GHz (RL < −10 dB, 9.5–12.14 GHz), superior than that of the bare SiC NWs. The improved absorption performance is mainly originated from the complex conductive network and the numerous interfaces formed by the vertically grown graphene on the SiC NWs, which are beneficial for multiple scattering and absorptions of the incident microwave.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.