Silicon carbide for microelectromechanical systems

Abstract

Silicon carbide (SiC) has recently attracted attention as a wide bandgap semiconductor with great potential for microelectromechanical systems (MEMS). SiC exhibits excellent electrical, mechanical, and chemical properties, making it well suited for harsh environment applications where traditional MEMS are constrained by the physical limitations of silicon (Si). This paper reviews the material properties, deposition techniques, micromachining processes, and other issues regarding the fabrication of SiC-based sensors and actuators. Special emphasis is placed on the properties that make SiC attractive for MEMS, and the Si-based processing techniques that have been adapted to realise SiC MEMS structures and devices. An introduction to micromachining is provided for readers not familiar with MEMS fabrication techniques.