Silicon carbide fiber oxidation behavior in the presence of boron nitride

Abstract

AbstractThe oxidation behavior of Sylramic SiC fibers without a boron nitride surface layer was compared to Sylramic iBN SiC fibers with a boron nitride surface layer by conducting thermogravimetric analysis in dry O2 at temperatures ranging from 800 to 1300°C for times up to 100 hours. Sylramic fibers followed the Deal and Grove oxidation kinetic model. A transient period of accelerated oxidation kinetics was observed with Sylramic iBN fibers. Raman spectroscopic analysis of oxidized fibers provided evidence for a borosilicate glass structure. The boron concentrations in the oxides, quantified by inductively coupled plasma‐optical emission spectrometry, were correlated with the weight change behavior, oxide thickness, and fiber recession of the oxidized fibers. Oxides formed from Sylramic iBN fibers were typically higher in boron concentration, which led to initial rapid oxidation rates that were 3‐10 times faster than observed for pure SiC. Slower oxidation rates followed as the oxide surface became increasingly enriched with SiO2 due to boria volatilization, thus limiting boria effects on SiC fiber oxidation kinetics. The accelerated high‐temperature oxidation of SiC fibers due to the presence of BN are discussed in terms of the borosilicate glass structure and composition.