Abstract
Silicon Carbide (SiC) Layers Were Prepared on Diamond Powders by Rotary Chemical Vapor Deposition (RCVD) Using C6H18Si2as a Precursor. Diamond Particles with Cleavable and Sharp Configurations Were Covered with Smooth Layers by RCVD. Infrared Absorption Bands at around 800 and 1000 cm-1Attributed to Si-C Bonding Were Observed in FTIR Spectrum on the Diamond Powders. The Pellet Sample Sintered by Spark Plasma Sintering Using the Diamond Powders Suggested that β-SiC Was Deposited on the Diamond Particles.
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