Silicon-based ultra-broadband mid-IR and LWIR near-perfect metamaterial absorber

Abstract

Ultra-broadband metamaterial absorbers (UBMAs) that are compatible with CMOS technology for use in the mid-infrared and long-wave infrared regions are crucial for a variety of applications, including radiative cooling, thermal photovoltaic, and thermal imaging. In this regard, we propose, in this work, a design of an UBMA based on the heavily doped silicon (D-Si) and silicon carbide (SiC). The 3D finite-difference time-domain method is used, mainly, to numerically calculate the optical characteristics of the proposed UBMA. The absorber, which is made up of a periodic array of symmetrical multilayered square rings of D-Si and SiC, achieves high absorption with an average absorption of 95% over a wavelength range of 2.5–22 µm. This broad range of wavelength absorption is attained, encompassing the mid-, long-wave, and partial far-infrared regions. In addition to the materials' inherent absorption, the stimulation of magnetic polaritons, surface plasmon polaritons, localized surface plasmon resonance, and cavity resonance are responsible for the nearly perfect broadband absorption. Under normal incidence, the proposed UBMA is polarization-independent due to the symmetrical design of the absorber. Furthermore, the impact of the incidence angle on the absorption of transverse electric and transverse magnetic waves is examined.