Abstract
Silicon-based polycrystalline solar cells are first fabricated by metal-induced lateral crystallization in which n-type polycrystalline-silicon (poly-Si) films, processed using nickel-induced amorphous silicon, are grown on p-silicon substrate at 550 °C by furnace annealing. The fabricated n-type poly-Si/p-substrate solar cell exhibits a conversion efficiency of 10.4% and an open-circuit voltage of 0.54 V without any passivation or antireflection coating layers.
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