Abstract

Measuring states of polarizations (SOPs) is a fundamental requirement in high capacity optical communications, optical imaging, and material characterization. However, most of the existing methods focused on the assembly of spatial optical elements, making the system bulky and complex. Alternatively, the integrated methods were mainly presented by plasmonic nanostructures or metasurfaces, difficult to integrate with commonly used silicon photonic devices. For large-scale inter-chip optical interconnections, the silicon-based polarization analyzers are in demand and in its infancy. Here, a silicon-based polarization analyzer by polarization-frequency mapping is put forward. The basis vectors of polarization are mapped to two frequencies by thermally tuned phase shifters. The SOPs are retrieved from the frequency domain. The proposed polarization analyzer is demonstrated experimentally and can measure SOPs in the entire C-band. The scheme is compatible with the CMOS fabrication process, making it possible to be integrated with other silicon-based devices monolithically.

Highlights

  • INTRODUCTIONInspired by the polarization-mode-frequency mapping techniques in our previous studies,[27,28,29,30] it is possible to design a one-output polarization analyzer on a silicon-on-insulator (SOI) platform with the mapping techniques

  • The state of polarization (SOP) is a key property of electromagnetic beams and has been applied in diverse areas, such as optical communications,[1] optical biopsyand material characterization,[2,3] pollution monitoring, and structure stress imaging.[4]

  • One is the purity of targeted frequencies generated by the phase shifters

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Summary

INTRODUCTION

Inspired by the polarization-mode-frequency mapping techniques in our previous studies,[27,28,29,30] it is possible to design a one-output polarization analyzer on a silicon-on-insulator (SOI) platform with the mapping techniques. A novel method for polarization analysis is presented by polarization-frequency mapping on the SOI platform. The two basis vectors of polarization are mapped to two different radio frequencies by thermally tuned phase shifters. The scheme is silicon-based and compatible with the CMOS fabrication process, which makes it possible to be integrated with other silicon-based devices monolithically. It shows great potentials for polarization measurement and monitoring in both space optics and inter-chip optical interconnections

PRINCIPLE
CHIP FABRICATION AND CHARACTERIZATION
Voltage test
Polarization measurement
CONCLUSION
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