Silicon-based photocells of enhanced spectral sensitivity with nano-sized graded band gap structures

Abstract

Photoelectric properties of monocrystalline silicon with multiply charged nanoclusters are studied that generate “silicon clusters,” i.e., nano-sized graded band gap structures. Multiply charged nanoclusters of manganese atoms strongly influence the photoelectric properties of monocrystalline silicon and expand the range of spectral sensitivity up to 8 μm; the photoelectric sensitivity reaches ∼109. Conditions occur for the emergence of photo-emf in such a material in the infrared region when hν< E g . The obtained experimental data expand the functional capabilities for the application of silicon with multiply charged impurity atoms.