Abstract
Nanocrystalline-Si (nc-Si) films were prepared with reactive pulse laser deposition (during the deposition, oxygen or nitrogen gas was introduced into the chamber). The effect of the formation conditions on the optical and photoluminescence properties of films have been analysed. The electronography of cross-sections was performed by transmission electron microscope. It was concluded that pulsed laser deposition is a method to produce the Si low-dimensional material.
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