Abstract

In this paper, the molecular beam epitaxy of InGaN nanocolumns on silicon-based microhole arrays has been investigated experimentally. A low-cost method has been designed, which contains the processes of photolithography and wet etching. Tuning uniform microhole arrays show the ability in modulating the luminescence spectra of InGaN nanocolumns, which could lead to the modulation of tristimulus coordinates and correlated color temperatures. Due to the shadow effect, it is found that the size of microholes and the area of flat Si surface have more obvious effects, while the configuration of microhole arrays has limited effect on the modulation of peak wavelength.

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