Abstract
With the increasing demand for capacity in communications networks, the use of integrated photonics to transmit, process and manipulate digital and analog signals has been extensively explored. Silicon photonics, exploiting the complementary-metal-oxide-semiconductor (CMOS)-compatible fabrication technology to realize low-cost, robust, compact, and power-efficient integrated photonic circuits, is regarded as one of the most promising candidates for next-generation chip-scale information and communication technology (ICT). However, the electro-optic modulators, a key component of Silicon photonics, face challenges in addressing the complex requirements and limitations of various applications under state-of-the-art technologies. In recent years, the graphene EO modulators, promising small footprints, high temperature stability, cost-effective, scalable integration and a high speed, have attracted enormous interest regarding their hybrid integration with SiPh on silicon-on-insulator (SOI) chips. In this paper, we summarize the developments in the study of silicon-based graphene EO modulators, which covers the basic principle of a graphene EO modulator, the performance of graphene electro-absorption (EA) and electro-refractive (ER) modulators, as well as the recent advances in optical communications and microwave photonics (MWP). Finally, we discuss the emerging challenges and potential applications for the future practical use of silicon-based graphene EO modulators.
Highlights
At present, global internet users make up more than half of the global population thanks to the development of information and communication technology (ICT) and are expected to exceed two thirds by 2023
To break the limits of the conventional pure silicon-based modulator, many material hybrids integrated with silicon have been pursued, including lithium niobate (LN) on insulator (LNOI)/SOI [22,23], a silicon–polymer hybrid (SPH) [24], III–V on silicon [25] and a Si/graphene hybrid [26,27]
The GOS modulator is easy to fabricate and has exhibited a superior performance, the limited interaction area of single-layer graphene (SLG) as well as the optical intrinsic loss introduced by the ion implantation on silicon hinder the increase in both the modulation speed and depth
Summary
Global internet users make up more than half of the global population thanks to the development of information and communication technology (ICT) and are expected to exceed two thirds by 2023. The GOS modulator is easy to fabricate and has exhibited a superior performance, the limited interaction area of single-layer graphene (SLG) as well as the optical intrinsic loss introduced by the ion implantation on silicon hinder the increase in both the modulation speed and depth.
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