Silicon-Based All-Dielectric Metasurface on an Iron Garnet Film for Efficient Magneto-Optical Light Modulation in Near IR Range.

Denis M Krichevsky,Vladimir I Belotelov,Daria O Ignatyeva,Mikhail P Mandrik,Shuang Xia,Lei Bi

doi:10.3390/nano11112926

Abstract

All-dielectric nanostructures provide a unique low-loss platform for efficiently increasing light-matter interaction via excitation of the localized or propagating optical modes. Here, we report on the transverse magneto-optical Kerr effect enhancement in an all-dielectric metasurface based on a two-dimensional array of Si nanodisks on a cerium substituted dysprosium iron garnet thin film. We observed up to 15% light intensity modulation under TM modes excitation. The observed magneto-optical effect is nearly independent of the rotation of the light incidence plane with respect to the metasurface. Being compatible with conventional semiconductor technology, our structure holds promise for device applications, such as light modulators, magnetic and chemical sensors.

Highlights

Light manipulation via nanostructured materials is a prominent issue of modern nanophotonics
We report on an enhanced magneto-optical response observed in the all-dielectric structure based on a two-dimensional (2D) grating of Si nanodisks on a cerium substituted dysprosium iron garnet thin film in the near IR range
It is critical to note that the transverse magneto-optical Kerr effect (TMOKE) resonances are unaffected by the orientation of the light incidence plane in relation to the metasurface

Summary

Introduction

Light manipulation via nanostructured materials is a prominent issue of modern nanophotonics. Excitation of various optical modes, such as surface or localized plasmons [14,15,16,17,18,19,20,21], waveguiding modes [22,23,24,25,26], surface Tamm states, and cavity modes in photonic crystals [9,10,27,28] strongly enhance the aforementioned effects in magnetic nanostructures. Light-matter interaction in such systems is always accompanied by high optical losses and heating, making them less suitable for device applications. At this point, all-dielectric nanostructures are very promising since they are substantially less dissipative

Methods

Results

Conclusion