Abstract
Resistors may be formed from silicon both from the bulk material and by forming on the surface of the silicon diffused regions which are isolated from the bulk by a p–n junction. This isolation is incomplete owing to leakage current and capacitance in the junction and to field-effect transistor action. Noise in silicon resistors should not be much larger than the Johnson noise except where noise is introduced at the contacts. Contacts having linear current/voltage characteristics may be made to silicon either by the formation of a highly doped layer of the same type or by the formation of a region of high minority-carrier recombination at the contact. The chemically reduced nickel contact is of the latter type. Experimental results are presented to show that it may prove adequate as a contact material for resistors under suitable conditions. A method for making such resistors is described.
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