Silicon anisotropic etching in alkaline solutions III: On the possibility of spatial structures forming in the course of Si(100) anisotropic etching in KOH and KOH+IPA solutions

Abstract

The formation of 3D structures on Si(100) wafers by means of anisotropic etching results from the inter-dependences of (100) plane etching rates and basic high-indexed planes. The shapes of the figures obtained under anisotropic etching (holes or islands limited by the planes inclined to the surface at various well-defined angles) are considered in comparison with the etching rate values of various crystallographic planes. The best etchants and etching conditions for the formation of figures of the desired shape are presented in this paper.