Silicon and gallium arsenide field-effect transistors with Schottky-barrier gate

Abstract

Field-effect transistors with Schottky-barrier gates have been produced using epitaxial layers of n-type silicon on p-type substrates, and n-type gallium arsenide on semi-insulating substrates. Some simple design considerations are presented and the fabrication processes are discussed in detail. Comparisons are made between two different device geometries and between silicon and gallium arsenide devices.