Abstract
We report on the acoustoelectric (AE) interaction in heterogeneously integrated thin-film lithium niobate on standard resistivity and high resistivity silicon substrates (LNOSs). The monolithic LNOS platform delivers acoustic waves with a large electromechanical coupling coefficient (K2) and draws on standard metal-oxide semiconductor field effect techniques to maximise AE interaction by impedance matching the acoustic wave with the semiconductor carriers. Preliminary results are obtained on AE attenuation (4 dB cm−1) and AE gain (6 dB cm−1). With further improvement of the LN/Si interface, the LNOS platform can be expected to give rise to an era of non-reciprocal silicon acoustoelectronics.
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