Abstract
Rapid thermal processing of Co/Ti/Si samples induces the growth of cubic intermetallic compounds as a first step of the reaction. For temperatures above 750°C, a ternary phase Ti 0.75Co 0.25Si 2− x appears simultaneously with disilicides of the excess metal, in excess with respect to that stoichiometry. In the reverse Ti/Co/Si structures, Co is also the main diffusing species at low temperatures. Co atoms react at both interfaces, this time to form Co silicides and intermetallic compounds. As soon as Si atoms become mobile, the same ternary phase formation occurs. The existence of this stable silicide of a new type is confirmed by the analysis of bulk samples of the same composition prepared by arc melting. This study is the first report of the formation of such a ternary compound for thin film structures.
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