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Abstract
Silicidation of molybdenum and titanium double layers has been investigated by measuring sheet resistance, SIMS, and Auger depth profiles. Mo/Ti, , Ti/Mo, double layers, and Ti‐Mo cosputtered layer were annealed in Ar or atmosphere with a halogen lamp annealer or diffusion furnace. Listed in increasing order of sheet resistance, they are: Mo/Ti and , , Ti/Mo, Ti‐Mo cosputtered layer. These results were explained by SIMS observations. The variations of the sheet resistance of the annealed Mo/Ti double layers with annealing temperature were divided into three temperature regions. In the low annealing temperature region, sheet resistance of the unreacted Mo layer was dominant. In the intermediate region, sheet resistance of the titanium silicide layer formed by the reaction with Ti and Si substrate was dominant. In the high annealing temperature region, sheet resistance of the molybdenum and titanium silicide mixed layer formed by interdiffusion of Mo and Ti was dominant. The Mo/Ti double layer, annealed at 800°–900°C for 20s had the lowest sheet resistance and good etching resistance towards hydrofluoric acid.
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