Abstract
We report on the initial stage of growing of silicon nanostructures on Pb-induced 3 × 3 and 3 × 7 reconstructed Si(111) surfaces. The deposition of 0.75 monolayer of Si at a temperature of around 200 K results in Si nanoribbons a few-nanometers in length running in three equivalent high symmetry directions of Si(111) surface, as revealed by low temperature scanning tunneling microscopy measurements. The nanoribbons are predominantly 1.6 nm wide and show local 3 × 3 reconstruction. These findings are interpreted within the framework of silicene nanoribbons grown on a bare Si(111) surface.
Highlights
The discovery of graphene and the observation of its remarkable properties [1] have boosted an intensive search for similar materials with a two-dimensional (2D) honeycomb geometry, mainly composed of group-IV elements [2,3,4]
Pb atoms play an important role in this process, as they stabilize the Si(111) surface and control the growth of silicene nanoribbons
Further analysis is required to understand the role of Pb atoms and to determine details and the energetic stability of the proposed model, which has been postponed for future density functional theory (DFT) investigations
Summary
The discovery of graphene and the observation of its remarkable properties [1] have boosted an intensive search for similar materials with a two-dimensional (2D) honeycomb geometry, mainly composed of group-IV elements [2,3,4]. The physical origin of the buckling comes from the orbital hybridization of silicon, with sp being preferred In spite of this geometry, the outstanding electronic properties, characteristic of graphene, are preserved in silicene. An almost-flat silicene layer with Si atoms sticking out is observed Such a peculiar arrangement of atoms is a consequence of the electronic mechanism protecting the Dirac spectrum from degradation, as was theoretically discovered [18,25]. Pb atoms play an important role in this process, as they stabilize the Si(111) surface and control the growth of silicene nanoribbons. These findings open new routes for the creation of silicene nanostructures on silicon surfaces
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