Abstract
Hybrid silica-based (SiOxCyHz) thin films were deposited via plasma enhanced-chemical vapor deposition (PE-CVD) on SiO2, Si(100) and Cu substrates starting from tetramethoxysilane (TMOS) as precursor compound. Depositions were performed from Ar/TMOS plasmas in the absence of oxidizing gases at temperatures as low as 60 °C. In particular, the dependence of the system composition, structure, morphology and optical properties on the applied rf-power (from 20 to 80 W) was investigated in detail. This work is devoted to the XPS (x-ray photoelectron spectroscopy) characterization of a representative SiOxCyHz thin film supported on Si(l00) and synthesized at 80 W, with particular regard to the origin of the organic residuals incorporated in the obtained hybrid material.
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