Abstract
A modified Stöber process using vinyltriethoxysilane as the precursor and in the presence of graphene oxide unprecedentedly leads to the exclusive growth of monodispersed silica nanocrystals (SiO2 NCs) (ca. 3–4nm) at room-temperature on single-layer graphene sheet with a high deposition density (ca. 1016/m2), where graphene oxide is simultaneously reduced by ammonia. Well-resolved lattice fringes with the spacing of 0.19nm demonstrate the excellent crystallinity of SiO2 NC, which has an absorption band in the range of 200–400nm. The anchoring of vinyl-silanols on graphene oxide through SiOC oxo-bridging and the π–π interaction between double bonds of vinyl-silanols and graphene oxide co-direct the orderly growth of SiO2 NC nuclei on graphene. Compared with isolate and physically mixed SiO2 and graphene, the composite has decreased impedance and 4.5 times improved photocurrent, which also shows extraordinarily high photocatalytic activity toward the degradation of organic pollutant.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
