Abstract

Introduction Chemical mechanical polishing is the only one technology to obtain global planarization, which is widely applied to polish silicon, copper dual damascene structure, high/low K dielectric materials, tungsten plugs, poly-silicon gates and shallow trench isolation structure. SiO2 is widely used as abrasive for its superior properties like stability, suspension property and low viscosity There are lots of studies on silica properties. However, the detailed silica surface, inner characteristic and its effect on polishing performance are still unclear. we must also explore the silica nano-particle tiny structure difference, so we designed an experiment that we anneal the colloid silica and re-dispersed it to analyze the variety of particles properties and its influences on CMP performance.

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