Abstract
In material science, silicon-based molecules are staple reagents for applications such as self-assembled monolayer formation, reduction of surface energy, and modification of surface chemistry for secondary functionalization reactions. In our presentation, we will review organosilanes in the context of Area Specific Deposition (ASD), with a particular emphasis on cyclic azasilanes. Compared with more traditional linear chlorosilane and aminosilane-based surface treatments, cyclic azasilanes offer extremely rapid (<5 second) deposition times over a broad temperature range without any volatile chemical by-products. The interaction of cyclic azasilanes with various oxide and metal substrates will be discussed in relation to the plasma, thermal, or wet methods used to condition the surfaces for deposition. Furthermore, we will discuss the ability of the resulting silane monolayer films to block deposition of common organometallic ALD precursors in relation to deposition process conditions. In conclusion, we will demonstrate the resulting dielectric-on-dielectric and dielectric-on-metal deposition schemes.
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