Abstract

The aim of this paper is to show the possibility to synthesize silicon-based deposits on a polypropylene substrate, using a glow dielectric barrier discharge at atmospheric pressure, and to correlate the gas phase behavior with the properties of the thin film deposits. The discharge is generated in a mixture of nitrous oxide and silane, diluted in nitrogen. The influence of the [N2O]/[SiH4] ratio on the layer characteristics is mainly studied. Deposits are analyzed by XPS, SSIMS, AFM and wetting angle measurements. The discharges are also characterized by their optical emission spectra. Measurements are made as a function of the distance from the gas inlet, and they allow one to correlate these spectra with the film thickness and its chemical composition. Finally, chemical kinetics of the reactive gas decomposition reactions are proposed.

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