Abstract
Laser-ablated beryllium atoms have been reacted with silane molecules during condensation in excess neon and argon at 4K. Absorptions due to HBeSiH3 and HBe(μ-H)3Si were observed and identified on the basis of isotopic IR spectroscopy, deuterium substitution with SiD4, and quantum chemical frequency calculations. The observed results show excited Be atom (1P1:2s12p1) can insert into SiH bond spontaneously and the insertion product rearranges to HBe(μ-H)3Si upon photolysis. The electron localization function (ELF) analysis suggests that 3c-2e hydrogen bridge bond (BeHSi) was formed by the donation of electrons for SiH σ bond to the empty p orbital of Be atom for HBe(μ-H)3Si molecule, which shows much difference from CH bond complexes.
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